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| Philips Semiconductors Product specification Triacs sensitive gate GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, suitable for surface mounting, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. BT137S series E BT137M series E QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BT137S (or BT137M)Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500E 500 8 65 600E 600 8 65 800E 800 8 65 V A A PINNING - SOT428 PIN Standard Alternative NUMBER S M 1 2 3 tab MT1 MT2 gate MT2 gate MT2 MT1 MT2 PIN CONFIGURATION tab SYMBOL T2 T1 2 1 3 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb 102 C full sine wave; Tj = 25 C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/s T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 MAX. -600 6001 8 65 71 21 50 50 50 10 2 5 5 0.5 150 125 -800 800 UNIT V A A A A2s A/s A/s A/s A/s A V W W C C I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature over any 20 ms period 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/s. October 1997 1 Rev 1.200 Philips Semiconductors Product specification Triacs sensitive gate THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. - BT137S series E BT137M series E TYP. 75 MAX. 2.0 2.4 - UNIT K/W K/W K/W Thermal resistance full cycle junction to mounting base half cycle Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 junction to ambient STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ T2+ G+ T2+ GT2- GT2- G+ MIN. 0.25 TYP. 2.5 4.0 5.0 11 3.0 14 3.0 4.0 2.5 1.3 0.7 0.4 0.1 MAX. 10 10 10 25 25 35 25 35 20 1.65 1.5 0.5 UNIT mA mA mA mA mA mA mA mA mA V V V mA IL Latching current VD = 12 V; IGT = 0.1 A IH VT VGT ID Holding current On-state voltage Gate trigger voltage Off-state leakage current VD = 12 V; IGT = 0.1 A IT = 10 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL dVD/dt tgt PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; gate open circuit ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s MIN. TYP. 50 2 MAX. UNIT V/s s October 1997 2 Rev 1.200 Philips Semiconductors Product specification Triacs sensitive gate BT137S series E BT137M series E 12 10 Ptot / W BT137 Tmb(max) / C 101 = 180 120 105 109 10 IT(RMS) / A BT137 1 90 60 30 8 102 C 8 6 4 2 0 6 113 4 117 121 125 10 2 0 2 4 6 IT(RMS) / A 8 0 -50 0 50 Tmb / C 100 150 Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle. BT137 BT137 Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. BT137 1000 ITSM / A IT I TSM time 25 IT(RMS) / A 20 Tj initial = 25 C max 15 100 dI T /dt limit 10 T2- G+ quadrant 5 10 10us 100us 1ms T/s 10ms 100ms 0 0.01 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb 102C. VGT(Tj) VGT(25 C) 80 70 60 50 40 30 ITSM / A BT137 IT T ITSM time 1.6 1.4 1.2 1 0.8 BT136 Tj initial = 25 C max 20 10 0.6 0.4 -50 0 1 10 100 Number of cycles at 50Hz 1000 0 50 Tj / C 100 150 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj. October 1997 3 Rev 1.200 Philips Semiconductors Product specification Triacs sensitive gate BT137S series E BT137M series E 3 2.5 2 1.5 IGT(Tj) IGT(25 C) BT137E T2+ G+ T2+ GT2- GT2- G+ 25 IT / A Tj = 125 C Tj = 25 C BT137 20 typ Vo = 1.264 V Rs = 0.0378 Ohms max 15 10 1 0.5 0 -50 5 0 50 Tj / C 100 150 0 0 0.5 1 1.5 VT / V 2 2.5 3 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj. IL(Tj) IL(25 C) Fig.10. Typical and maximum on-state characteristic. 3 2.5 TRIAC 10 Zth j-mb (K/W) BT137 unidirectional 1 bidirectional 2 1.5 1 0.5 0 -50 0.01 10us 0.1ms 1ms 10ms tp / s 0.1 P D tp t 0 50 Tj / C 100 150 0.1s 1s 10s Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj. IH(Tj) IH(25C) Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. dVD/dt (V/us) 3 2.5 2 1.5 1 0.5 TRIAC 1000 100 10 0 -50 0 50 Tj / C 100 150 1 0 50 Tj / C 100 150 Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj. Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. October 1997 4 Rev 1.200 Philips Semiconductors Product specification Triacs sensitive gate MECHANICAL DATA Dimensions in mm Net Mass: 1.1 g 6.73 max 1.1 2.38 max 0.93 max seating plane BT137S series E BT137M series E 5.4 tab 4 min 6.22 max 10.4 max 4.6 2 1 2.285 (x2) 0.5 min 0.5 0.3 0.5 3 0.8 max (x2) Fig.13. SOT428 : centre pin connected to tab. MOUNTING INSTRUCTIONS Dimensions in mm 7.0 7.0 2.15 2.5 1.5 4.57 Fig.14. SOT428 : minimum pad sizes for surface mounting. Notes 1. Plastic meets UL94 V0 at 1/8". October 1997 5 Rev 1.200 Philips Semiconductors Product specification Triacs sensitive gate DEFINITIONS Data sheet status Objective specification Product specification Limiting values BT137S series E BT137M series E This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1997 6 Rev 1.200 |
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